Comprehensive measurement of the near-infrared refractive index of GaAs at cryogenic temperatures

• Published in: Optics letters Vol. 48; no. 13; p. 3507
• Main Authors: Jiang, Guo-Qiu, Zhang, Qi-Hang, Zhao, Jun-Yi, Qiao, Yu-Kun, Ge, Zhen-Xuan, Liu, Run-Ze, Chung, Tung-Hsun, Lu, Chao-Yang, Huo, Yong-Heng
• Format: Journal Article
• Language: English
• Published: United States 01.07.2023
• Subjects: Photons; Refractometry; Semiconductors; Temperature
• ISSN: 1539-4794
• DOI: 10.1364/OL.491357

The refractive index is a critical parameter in optical and photonic device design. However, due to the lack of available data, precise designs of devices working in low temperatures are still frequently limited. In this work, we have built a homemade spectroscopic ellipsometer (SE) and measured the refractive index of GaAs at a matrix of temperatures (4 K < T < 295 K) and photon wavelengths (700 nm < λ < 1000 nm) with a system error of ∼0.04. We verified the credibility of the SE results by comparing them with afore-reported data at room temperature and with higher precision values measured by vertical GaAs cavity at cryogenic temperatures. This work makes up for the lack of the near-infrared refractive index of GaAs at cryogenic temperatures and provides accurate reference data for semiconductor device design and fabrication.