The Cu Based AlGaN/GaN Schottky Barrier Diode

The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si su bstrates are compared. The onset voltage of Cu Schottky diodes is about 0.4 V less than the Ni/Al contact. For the Cu/Ni Schottky contact, the leakage current is 4.7 × 10^-7 A/mm at -10 V. After annealing, the...

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Published inChinese physics letters Vol. 32; no. 6; pp. 192 - 194
Main Author 李迪 贾利芳 樊中朝 程哲 王晓东 杨富华 何志
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
AlGaN/GaN
Contact
Diodes
Electric potential
Gallium nitrides
Leakage current
Nickel
Schottky diodes
Voltage
泄漏电流
电气特性
肖特基二极管
肖特基接触
起始电压
铜/镍
铜基
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Summary:The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si su bstrates are compared. The onset voltage of Cu Schottky diodes is about 0.4 V less than the Ni/Al contact. For the Cu/Ni Schottky contact, the leakage current is 4.7 × 10^-7 A/mm at -10 V. After annealing, the leakage current is decreased to 3.7 × 10^-7 A/mm for 400℃ or 4.6 × 10^-8 A/mm for 500℃, respectively. The electrical property is affected by the thickness ratio of Cu to Ni. The Cu/Ni for 80/20 nm shows a low onset voltage, while the Cu/Ni for 20/80 nm shows a low leakage current. Both breakdown voltages are above 720 V.
Bibliography:11-1959/O4
The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si su bstrates are compared. The onset voltage of Cu Schottky diodes is about 0.4 V less than the Ni/Al contact. For the Cu/Ni Schottky contact, the leakage current is 4.7 × 10^-7 A/mm at -10 V. After annealing, the leakage current is decreased to 3.7 × 10^-7 A/mm for 400℃ or 4.6 × 10^-8 A/mm for 500℃, respectively. The electrical property is affected by the thickness ratio of Cu to Ni. The Cu/Ni for 80/20 nm shows a low onset voltage, while the Cu/Ni for 20/80 nm shows a low leakage current. Both breakdown voltages are above 720 V.
LI Di, JIA Li-Fang, FAN Zhong-Chao, CHENG Zhe, WANG Xiao-Dong, YANG Fu-Hua, HE Zhi（ 1Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 ;2Semiconductor Lighting R＆D Center, Chinese Academy of Sciences, Beijing 100083）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/6/068502