Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offse...

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Published inJournal of semiconductors Vol. 36; no. 1; pp. 82 - 85
Main Author 李蕾蕾 周昕杰 于宗光 封晴
Format Journal Article
LanguageEnglish
Published 2015
Subjects
Depletion
Devices
Ion implantation
Medical devices
Metal oxide semiconductors
NMOS器件
Phosphorus
Semiconductors
Silicon dioxide
SOI
总剂量辐射
电子陷阱
硬化能力
磷离子
离子注入技术
背栅效应
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ISSN1674-4926
DOI10.1088/1674-4926/36/1/014006

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Summary:The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices.
Bibliography:The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices.
11-5781/TN
back gate phosphorus ions implantation total-dose radiation SOI MOS back-gate effect
Li Leilei, Zhou Xinjie, Yu Zongguang, and Feng Qing（1 School of Microelectronics, Xidian University, Xi＇an 710071, China; 2 The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China）
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/1/014006