A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

• Published in: Chinese physics B Vol. 25; no. 6; pp. 458 - 462
• Main Author: 黄郊 郭丽伟 芦伟 张永晖 史哲 贾玉萍 李治林 杨军伟 陈洪祥 梅增霞 陈小龙
• Format: Journal Article
• Language: English
• Published: 01.06.2016
• Subjects: Devices; Electrodes; Graphene; Miniaturization; Photodetectors; Semiconductors; Silicon carbide; Ultraviolet; 半导体技术; 敏感; 石墨; 碳化硅; 紫外光电探测器; 紫外探测器; 自供电; 节约能源
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/25/6/067205

A self-powered graphene-based photodetector with high performance is particularly useful for device miniaturization and to save energy.Here,we report a graphene/silicon carbide（SiC）-based self-powered ultraviolet photodetector that exhibits a current responsivity of 7.4 m A/W with a response frequency of over a megahertz under 325-nm laser irradiation.The built-in photovoltage of the photodetector is about four orders of magnitude higher than previously reported results for similar devices.These favorable properties are ascribed to the ingenious device design using the combined advantages of graphene and SiC,two terminal electrodes,and asymmetric light irradiation on one of the electrodes.Importantly,the photon energy is larger than the band gap of SiC.This self-powered photodetector is compatible with modern semiconductor technology and shows potential for applications in ultraviolet imaging and graphene-based integrated circuits.