New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

A new SOI power device with multi-region high-concentration fixed charge（MHFC） is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer（BOX）, by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversi...

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Published inChinese physics B Vol. 24; no. 3; pp. 308 - 312
Main Author 李琦 李海鸥 唐宁 翟江辉 宋树祥
Format Journal Article
LanguageEnglish
Published 01.03.2015
Subjects
Breakdown
Charge
Drains
Electric potential
Electronic devices
Mathematical models
Optimization
Oxides
SOI
Voltage
击穿电压
功率器件
多区域
模型开发
浓度
界面电荷
绝缘
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Summary:A new SOI power device with multi-region high-concentration fixed charge（MHFC） is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer（BOX）, by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.
Bibliography:multi-region high-concentration fixed interface charge,model of breakdown voltage
A new SOI power device with multi-region high-concentration fixed charge（MHFC） is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer（BOX）, by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.
11-5639/O4
Li Qi, Li Hai-Ou, Tang Ning, Zhai Jiang-Hui, and Song Shu-Xiang（a） Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China; b） State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; c） College of Electronic Engineering, Guangxi Normal University, Guilin 541004, China
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/3/037203