Study of silicon pixel sensor for synchrotron radiation detection
The silicon pixel sensor(SPS) is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection(SRD). In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sens...
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Published in | Chinese physics C Vol. 40; no. 3; pp. 90 - 98 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.03.2016
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Subjects | |
Online Access | Get full text |
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Summary: | The silicon pixel sensor(SPS) is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection(SRD). In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sensor is a p+-in-n structure with guard-ring structures operated in full-depletion mode and is fabricated on 4-inch, N type, 320 μm thick, high-resistivity silicon wafers by a general Si planar process. To achieve high energy resolution of X-rays and obtain low dark current and high breakdown voltage as well as appropriate depletion voltage of the SPS, a series of technical optimizations of device structure and fabrication process are explored. With optimized device structure and fabrication process,excellent SPS characteristics with dark current of 2 n A/cm~2, full depletion voltage 〈 50 V and breakdown voltage〉 150 V are achieved. The fabricated SPSs are wire bonded to ASIC circuits and tested for the performance of X-ray response to the 1W2 B synchrotron beam line of the Beijing Synchrotron Radiation Facility. The measured S-curves for SRD demonstrate a high discrimination for different energy X-rays. The extracted energy resolution is high(〈 20% for X-ray photon energy 〉 10 keV) and the linear properties between input photo energy and the equivalent generator amplitude are well established. It confirmed that the fabricated SPSs have a good energy linearity and high count rate with the optimized technologies. The technology is expected to have a promising application in the development of a large scale SRD system for the Beijing Advanced Photon Source. |
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Bibliography: | synchrotron X-ray silicon pixel sensor dark current energy resolution count rate 11-5641/O4 The silicon pixel sensor(SPS) is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection(SRD). In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sensor is a p+-in-n structure with guard-ring structures operated in full-depletion mode and is fabricated on 4-inch, N type, 320 μm thick, high-resistivity silicon wafers by a general Si planar process. To achieve high energy resolution of X-rays and obtain low dark current and high breakdown voltage as well as appropriate depletion voltage of the SPS, a series of technical optimizations of device structure and fabrication process are explored. With optimized device structure and fabrication process,excellent SPS characteristics with dark current of 2 n A/cm~2, full depletion voltage 〈 50 V and breakdown voltage〉 150 V are achieved. The fabricated SPSs are wire bonded to ASIC circuits and tested for the performance of X-ray response to the 1W2 B synchrotron beam line of the Beijing Synchrotron Radiation Facility. The measured S-curves for SRD demonstrate a high discrimination for different energy X-rays. The extracted energy resolution is high(〈 20% for X-ray photon energy 〉 10 keV) and the linear properties between input photo energy and the equivalent generator amplitude are well established. It confirmed that the fabricated SPSs have a good energy linearity and high count rate with the optimized technologies. The technology is expected to have a promising application in the development of a large scale SRD system for the Beijing Advanced Photon Source. Zhen-Jie Li, Yun-Cong Jia, Ling-Fei Hu,Peng Liu, nua-Xiang Yin(1 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China ;2 Key Lab. of Microelectronics Devices & Integrated Technology , Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China) ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1674-1137 0254-3052 |
DOI: | 10.1088/1674-1137/40/3/036001 |