Suppression of Andreev conductance in a topological insulator-superconductor nanostep junction
When two three-dimensional topological insulators (TIs) are brought close to each other with their surfaces aligned, the surfaces form a line junction. Similarly, three TI surfaces, not lying in a single plane, can form an atomic-scale nanostep junction. In this paper, Andreev reflection in a TI-TI-...
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Published in | Chinese physics B Vol. 25; no. 3; pp. 338 - 341 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.03.2016
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Subjects | |
Online Access | Get full text |
ISSN | 1674-1056 2058-3834 1741-4199 |
DOI | 10.1088/1674-1056/25/3/037301 |
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Abstract | When two three-dimensional topological insulators (TIs) are brought close to each other with their surfaces aligned, the surfaces form a line junction. Similarly, three TI surfaces, not lying in a single plane, can form an atomic-scale nanostep junction. In this paper, Andreev reflection in a TI-TI-superconductor nanostep junction is investigated theoretically. Be- cause of the existence of edge states along each line junction, the conductance for a nanostep junction is suppressed. When the incident energy (e) of an electron is larger than the superconductor gap (A), the Andreev conductance in a step junction is less than unity while for a plane junction it is unity. The Andreev conductance is found to depend on the height of the step junction. The Andreev conductance exhibits oscillatory behavior as a function of the junction height with the amplitude of the oscillations remaining unchanged when e = 0, but decreasing for e = A, which is different from the case of the plane junction. The height of the step is therefore an important parameter for Andreev reflection in nanostep junctions, and plays a role similar to that of the delta potential barrier in normal metal-superconductor plane junctions. |
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AbstractList | When two three-dimensional topological insulators (TIs) are brought close to each other with their surfaces aligned, the surfaces form a line junction. Similarly, three TI surfaces, not lying in a single plane, can form an atomic-scale nanostep junction. In this paper, Andreev reflection in a TI-TI-superconductor nanostep junction is investigated theoretically. Because of the existence of edge states along each line junction, the conductance for a nanostep junction is suppressed. When the incident energy ( epsilon ) of an electron is larger than the superconductor gap ( Delta ), the Andreev conductance in a step junction is less than unity while for a plane junction it is unity. The Andreev conductance is found to depend on the height of the step junction. The Andreev conductance exhibits oscillatory behavior as a function of the junction height with the amplitude of the oscillations remaining unchanged when epsilon = 0, but decreasing for epsilon = Delta , which is different from the case of the plane junction. The height of the step is therefore an important parameter for Andreev reflection in nanostep junctions, and plays a role similar to that of the delta potential barrier in normal metal-superconductor plane junctions. When two three-dimensional topological insulators (TIs) are brought close to each other with their surfaces aligned, the surfaces form a line junction. Similarly, three TI surfaces, not lying in a single plane, can form an atomic-scale nanostep junction. In this paper, Andreev reflection in a TI-TI-superconductor nanostep junction is investigated theoretically. Be- cause of the existence of edge states along each line junction, the conductance for a nanostep junction is suppressed. When the incident energy (e) of an electron is larger than the superconductor gap (A), the Andreev conductance in a step junction is less than unity while for a plane junction it is unity. The Andreev conductance is found to depend on the height of the step junction. The Andreev conductance exhibits oscillatory behavior as a function of the junction height with the amplitude of the oscillations remaining unchanged when e = 0, but decreasing for e = A, which is different from the case of the plane junction. The height of the step is therefore an important parameter for Andreev reflection in nanostep junctions, and plays a role similar to that of the delta potential barrier in normal metal-superconductor plane junctions. |
Author | 郑翌洁 宋俊涛 李玉现 |
AuthorAffiliation | College Of Physics & Information Engineering and Hebei Advanced Thin Films Laboratory, Hebei Norma/University, Shijiazhuang 050024, China |
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Cites_doi | 10.1103/PhysRevLett.97.067007 10.1126/science.1148047 10.1103/PhysRevB.90.045413 10.1103/PhysRevLett.74.1657 10.1103/PhysRevLett.108.106603 10.1103/RevModPhys.82.3045 10.1038/nphys1270 10.1103/PhysRevB.25.4515 10.1103/PhysRevLett.95.226801 10.1126/science.1133734 10.1103/PhysRevLett.107.166805 10.1103/PhysRevLett.104.016401 10.1126/science.282.5386.85 10.1103/PhysRevLett.98.106803 10.1103/PhysRevB.85.245402 10.1038/nature06843 10.1103/PhysRevLett.101.047005 10.1126/science.1173034 10.1103/PhysRevB.87.035432 10.1103/RevModPhys.83.1057 10.1038/nphys1274 10.1103/PhysRevLett.95.146802 10.1103/PhysRevB.78.193406 10.1143/JPSJ.77.031007 |
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Notes | topological insulator, nanostep junction, suppression of Andreev conductance 11-5639/O4 When two three-dimensional topological insulators (TIs) are brought close to each other with their surfaces aligned, the surfaces form a line junction. Similarly, three TI surfaces, not lying in a single plane, can form an atomic-scale nanostep junction. In this paper, Andreev reflection in a TI-TI-superconductor nanostep junction is investigated theoretically. Be- cause of the existence of edge states along each line junction, the conductance for a nanostep junction is suppressed. When the incident energy (e) of an electron is larger than the superconductor gap (A), the Andreev conductance in a step junction is less than unity while for a plane junction it is unity. The Andreev conductance is found to depend on the height of the step junction. The Andreev conductance exhibits oscillatory behavior as a function of the junction height with the amplitude of the oscillations remaining unchanged when e = 0, but decreasing for e = A, which is different from the case of the plane junction. The height of the step is therefore an important parameter for Andreev reflection in nanostep junctions, and plays a role similar to that of the delta potential barrier in normal metal-superconductor plane junctions. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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Snippet | When two three-dimensional topological insulators (TIs) are brought close to each other with their surfaces aligned, the surfaces form a line junction.... When two three-dimensional topological insulators (TIs) are brought close to each other with their surfaces aligned, the surfaces form a line junction.... |
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SubjectTerms | Conductance Deltas Nanostructure Planes Reflection Three dimensional Topology Unity 三维拓扑 平面结 振荡行为 电导 绝缘体 超导体 超导能隙 钛表面 |
Title | Suppression of Andreev conductance in a topological insulator-superconductor nanostep junction |
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