Suppression of Andreev conductance in a topological insulator-superconductor nanostep junction

When two three-dimensional topological insulators (TIs) are brought close to each other with their surfaces aligned, the surfaces form a line junction. Similarly, three TI surfaces, not lying in a single plane, can form an atomic-scale nanostep junction. In this paper, Andreev reflection in a TI-TI-...

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Bibliographic Details
Published inChinese physics B Vol. 25; no. 3; pp. 338 - 341
Main Author 郑翌洁 宋俊涛 李玉现
Format Journal Article
LanguageEnglish
Published 01.03.2016
Subjects
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/25/3/037301

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Summary:When two three-dimensional topological insulators (TIs) are brought close to each other with their surfaces aligned, the surfaces form a line junction. Similarly, three TI surfaces, not lying in a single plane, can form an atomic-scale nanostep junction. In this paper, Andreev reflection in a TI-TI-superconductor nanostep junction is investigated theoretically. Be- cause of the existence of edge states along each line junction, the conductance for a nanostep junction is suppressed. When the incident energy (e) of an electron is larger than the superconductor gap (A), the Andreev conductance in a step junction is less than unity while for a plane junction it is unity. The Andreev conductance is found to depend on the height of the step junction. The Andreev conductance exhibits oscillatory behavior as a function of the junction height with the amplitude of the oscillations remaining unchanged when e = 0, but decreasing for e = A, which is different from the case of the plane junction. The height of the step is therefore an important parameter for Andreev reflection in nanostep junctions, and plays a role similar to that of the delta potential barrier in normal metal-superconductor plane junctions.
Bibliography:topological insulator, nanostep junction, suppression of Andreev conductance
11-5639/O4
When two three-dimensional topological insulators (TIs) are brought close to each other with their surfaces aligned, the surfaces form a line junction. Similarly, three TI surfaces, not lying in a single plane, can form an atomic-scale nanostep junction. In this paper, Andreev reflection in a TI-TI-superconductor nanostep junction is investigated theoretically. Be- cause of the existence of edge states along each line junction, the conductance for a nanostep junction is suppressed. When the incident energy (e) of an electron is larger than the superconductor gap (A), the Andreev conductance in a step junction is less than unity while for a plane junction it is unity. The Andreev conductance is found to depend on the height of the step junction. The Andreev conductance exhibits oscillatory behavior as a function of the junction height with the amplitude of the oscillations remaining unchanged when e = 0, but decreasing for e = A, which is different from the case of the plane junction. The height of the step is therefore an important parameter for Andreev reflection in nanostep junctions, and plays a role similar to that of the delta potential barrier in normal metal-superconductor plane junctions.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/3/037301