Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

In this paper,the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors（HEMTs）,featuring a 50-nm and a 150-nm GaN thick channel layer,respectively,are compared.The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly...

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Published inChinese physics B Vol. 24; no. 2; pp. 362 - 367
Main Author 马晓华 张亚嫚 王鑫华 袁婷婷 庞磊 陈伟伟 刘新宇
Format Journal Article
LanguageEnglish
Published 01.02.2015
Subjects
AlGaN
Aluminum gallium nitrides
Breakdown
Channels
Devices
Electric fields
Electric potential
Gallium nitrides
HEMT器件
High electron mobility transistors
N沟道
Semiconductor devices
击穿机制
厚度
断开状态
管具
高电子迁移率晶体管
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/2/027101

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Summary:In this paper,the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors（HEMTs）,featuring a 50-nm and a 150-nm GaN thick channel layer,respectively,are compared.The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage（SVoff）.Device simulation indicates that thickening the channel increases the drain-induced barrier lowering（DIBL） but reduces the lateral electric field in the channel and buffer underneath the gate.The increase of BVoff in the thick channel device is due to the reduction of the electric field.These results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BVoff in AlGaN/GaN HEMTs.
Bibliography:Ma Xiao-Hua, Zhang Ya-Man, Wang Xin-Hua, Yuan Ting-Ting, Pang Lei, Chen Wei-Wei, and Liu Xin-Yu（ a） School of Advanced Materials and Nanotechnology, Xidian University, Xi＇an 710071, China; b） Key Laboratory of Microelectronics Device ＆ Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
In this paper,the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors（HEMTs）,featuring a 50-nm and a 150-nm GaN thick channel layer,respectively,are compared.The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage（SVoff）.Device simulation indicates that thickening the channel increases the drain-induced barrier lowering（DIBL） but reduces the lateral electric field in the channel and buffer underneath the gate.The increase of BVoff in the thick channel device is due to the reduction of the electric field.These results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BVoff in AlGaN/GaN HEMTs.
11-5639/O4
AlGaN/GaN HEMTs, GaN channel layer thickness, off-state breakdown, DIBL
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/2/027101