Structural phase transitions of tellurium nanoplates under pressure
In situ high-pressure angle dispersive x-ray diffraction experiments using synchrotron radiation on Te nanoplates were carried out with a diamond anvil cell at room temperature. The results show that Te-Ⅰ with a trigonal structure transforms to triclinic Te-Ⅱ at about 4.9 GPa, Te-Ⅱ transforms to mon...
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Published in | Chinese physics B Vol. 24; no. 3; pp. 280 - 283 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.03.2015
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Subjects | |
Online Access | Get full text |
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Summary: | In situ high-pressure angle dispersive x-ray diffraction experiments using synchrotron radiation on Te nanoplates were carried out with a diamond anvil cell at room temperature. The results show that Te-Ⅰ with a trigonal structure transforms to triclinic Te-Ⅱ at about 4.9 GPa, Te-Ⅱ transforms to monoclinic Te-Ⅲ at about 8.0 GPa, Te-Ⅲ turns to rhombohedral Te-Ⅳ at about 23.8 GPa, and Te-Ⅳ changes to body centered cubic Te-Ⅴ at 27.6 GPa. The bulk moduli B0 of Te nanoplates are higher than those of Te bulk materials. |
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Bibliography: | In situ high-pressure angle dispersive x-ray diffraction experiments using synchrotron radiation on Te nanoplates were carried out with a diamond anvil cell at room temperature. The results show that Te-Ⅰ with a trigonal structure transforms to triclinic Te-Ⅱ at about 4.9 GPa, Te-Ⅱ transforms to monoclinic Te-Ⅲ at about 8.0 GPa, Te-Ⅲ turns to rhombohedral Te-Ⅳ at about 23.8 GPa, and Te-Ⅳ changes to body centered cubic Te-Ⅴ at 27.6 GPa. The bulk moduli B0 of Te nanoplates are higher than those of Te bulk materials. tellurium nanoplates,phase transition,high pressure Li Chao, Arfan Bukhtiar, Shen Xi, Kong Pan-Pan, Wang Wei-Peng, Zhao Hao-Fei, Yao Yuan, Zou Bing-Suo, Li Yan-Chun, Li Xiao-Dong, Liu Jing, Jin Chang-Qing, and Yu Ri-Cheng(a) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China ;b) Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China ; c) Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1674-1056 2058-3834 1741-4199 |
DOI: | 10.1088/1674-1056/24/3/036401 |