张玉力, 丁. 陈. 何. 江. 卢. 邓. 陈. 杨. 杨. (2014). Improved Photoluminescence in InGaN/GaN Strained Quantum Wells. Chinese physics letters, 31(7), 137-140. https://doi.org/10.1088/0256-307X/31/7/076101
Chicago Style (17th ed.) Citation张玉力, 丁立贞 陈弘 何苗 江洋 卢太平 邓震 陈芳胜 杨帆 杨旗. "Improved Photoluminescence in InGaN/GaN Strained Quantum Wells." Chinese Physics Letters 31, no. 7 (2014): 137-140. https://doi.org/10.1088/0256-307X/31/7/076101.
MLA (9th ed.) Citation张玉力, 丁立贞 陈弘 何苗 江洋 卢太平 邓震 陈芳胜 杨帆 杨旗. "Improved Photoluminescence in InGaN/GaN Strained Quantum Wells." Chinese Physics Letters, vol. 31, no. 7, 2014, pp. 137-140, https://doi.org/10.1088/0256-307X/31/7/076101.
Warning: These citations may not always be 100% accurate.