Improved Photoluminescence in InGaN/GaN Strained Quantum Wells

The influence of strain accumulation on optical properties is investigated for InCaN/CaN-based blue lightemitting diodes grown by metal organic vapor-phase epitaxy. It is found that it is possible to reduce the strain relaxation and hence the nonradiative recombination centers in InCaN multi-quantum...

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Published inChinese physics letters Vol. 31; no. 7; pp. 137 - 140
Main Author 丁立贞 陈弘 何苗 江洋 卢太平 邓震 陈芳胜 杨帆 杨旗 张玉力
Format Journal Article
LanguageEnglish
Published 01.07.2014
Subjects
Crystal structure
Epitaxy
Gallium nitrides
Indium gallium nitrides
Optical properties
Quantum wells
Strain
Strain relaxation
发光效率
多量子阱
应变松弛
应变量子阱
氮化铟镓
氮化镓
汽相外延生长
结晶质量
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/31/7/076101

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Summary:The influence of strain accumulation on optical properties is investigated for InCaN/CaN-based blue lightemitting diodes grown by metal organic vapor-phase epitaxy. It is found that it is possible to reduce the strain relaxation and hence the nonradiative recombination centers in InCaN multi-quantum wells （MQWs） byadopting more InCaN/CaN MQWs pairs. The alleviation of strain relaxation in a superlattice layer results in the crystalline perfection and effective quality improvement of the epitaxial structures. With suitable control of the crystalline quality and reduced strain relaxation in the MQWs, there shows a 4-fold increase in light output luminous efficiency as compared to their conventional counterparts.
Bibliography:The influence of strain accumulation on optical properties is investigated for InCaN/CaN-based blue lightemitting diodes grown by metal organic vapor-phase epitaxy. It is found that it is possible to reduce the strain relaxation and hence the nonradiative recombination centers in InCaN multi-quantum wells （MQWs） byadopting more InCaN/CaN MQWs pairs. The alleviation of strain relaxation in a superlattice layer results in the crystalline perfection and effective quality improvement of the epitaxial structures. With suitable control of the crystalline quality and reduced strain relaxation in the MQWs, there shows a 4-fold increase in light output luminous efficiency as compared to their conventional counterparts.
11-1959/O4
DING Li-Zhen, CHEN Hong, HE Miao, JIANG Yang, LU Tai-Ping, DENG Zhen, CHEN Fang-Sheng, YANG Fan, YANG Qi, ZHANG Yu-Li（1 Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631 ; 2Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190）
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/7/076101