Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs

In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power Schottky barrier diodes （SBDs） are fabricated with three N-type drift layer thickness values of 10 μm, 30μm, and 50 μm, respectively. The avalanche breakdown capabilities, static and transient characteristics of the fabricated devices are...

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Bibliographic Details
Published inChinese physics B Vol. 25; no. 4; pp. 314 - 319
Main Author 宋庆文 汤晓燕 袁昊 王悦湖 张艺蒙 郭辉 贾仁需 吕红亮 张义门 张玉明
Format Journal Article
LanguageEnglish
Published 01.04.2016
Subjects
4H-SiC
Breakdown
Devices
Diodes
Drift
Electric potential
Mathematical analysis
Schottky diodes
Voltage
制造设备
功率器件
性能
结构
肖特基二极管
计算结果
雪崩击穿
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/25/4/047102

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Summary:In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power Schottky barrier diodes （SBDs） are fabricated with three N-type drift layer thickness values of 10 μm, 30μm, and 50 μm, respectively. The avalanche breakdown capabilities, static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical pre- dictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H-SiC theoretical limit line. The best achieved breakdown voltages （BVs） of the diodes on the 10 p.m, 30 m, and 50 -tm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances （Ron-sp） are 2.1 m--cm2, 7.34 mO. cm2, and 30.3 m-. cm2, respectively.
Bibliography:4H-SiC, Schottky-barrier diodes, breakdown, differential specific-on resistance
In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power Schottky barrier diodes （SBDs） are fabricated with three N-type drift layer thickness values of 10 μm, 30μm, and 50 μm, respectively. The avalanche breakdown capabilities, static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical pre- dictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H-SiC theoretical limit line. The best achieved breakdown voltages （BVs） of the diodes on the 10 p.m, 30 m, and 50 -tm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances （Ron-sp） are 2.1 m--cm2, 7.34 mO. cm2, and 30.3 m-. cm2, respectively.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/4/047102