Planar-buried-heterostructure laser diodes with oxidized AlAs insulating current blocking

We have proposed and demonstrated a novel planar-buried-heterostructure laser diode that includes oxidized AlAs current blocking layers exhibiting the overall lasing performance improvement. Superior current blocking characteristics of the insulating layers significantly improve maximum output power...

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Bibliographic Details
Published inIEEE journal of selected topics in quantum electronics Vol. 5; no. 3; pp. 688 - 693
Main Authors Yamazaki, H., Anan, T., Kudo, K., Sugou, S., Sasaki, T.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.1999
Subjects
Devices
Diode lasers
Epitaxial growth
Epitaxial layers
Fabrication
Injection current
Insulating layers
Insulation
Laboratories
Laser diodes
Lasing
Power generation
Quantum electronics
Threshold current
Threshold currents
Thyristors
Vertical cavity surface emitting lasers
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Summary:We have proposed and demonstrated a novel planar-buried-heterostructure laser diode that includes oxidized AlAs current blocking layers exhibiting the overall lasing performance improvement. Superior current blocking characteristics of the insulating layers significantly improve maximum output power compared to a conventional buried heterostructure with a p-n-p-n thyristor configuration. A forward breakover at the current blocking layers was not observed at an injection current of more than 1 A for a 300-/spl mu/m-long device with both cleaved facets. The excellent lasing performance at a threshold current of 6 mA, a slope efficiency of 0.51 W/A under continuous-wave conditions, and a maximum output power of up to 150 mW under pulsed conditions was also demonstrated.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:1077-260X
1558-4542
DOI:10.1109/2944.788436