Interference type amplifier using intermodal interference in potential channel structures

The proposed structure is a dual gate potential channel having a dimension in the order of 300 angstrom. This dimension is very similar to the dimension of practical tunnel diodes. The dimensions of the proposed amplifier are very small, and may be difficult to fabricate. Recent developments in elec...

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Bibliographic Details
Published inSolid-state electronics Vol. 35; no. 12; pp. 1841 - 1842
Main Authors Rahman, K.M., Kahn, M.R.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 1992
Elsevier Science
Subjects
Amplifiers
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Temperature
Voltage current curve
Interference
Tunnel diode
Theoretical study
Amplifier
Electric current
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Summary:The proposed structure is a dual gate potential channel having a dimension in the order of 300 angstrom. This dimension is very similar to the dimension of practical tunnel diodes. The dimensions of the proposed amplifier are very small, and may be difficult to fabricate. Recent developments in electron beam epitaxy make the fabrication of such structure possible.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(92)90271-D