任晓敏, 王. 胡. 邓. 贺. 王. 段. 黄. (2015). Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition. Chinese physics B, 24(2), 449-452. https://doi.org/10.1088/1674-1056/24/2/028101
Chicago Style (17th ed.) Citation任晓敏, 王俊 胡海洋 邓灿 贺云瑞 王琦 段晓峰 黄永清. "Defect Reduction in GaAs/Si Film with InAs Quantum-dot Dislocation Filter Grown by Metalorganic Chemical Vapor Deposition." Chinese Physics B 24, no. 2 (2015): 449-452. https://doi.org/10.1088/1674-1056/24/2/028101.
MLA (9th ed.) Citation任晓敏, 王俊 胡海洋 邓灿 贺云瑞 王琦 段晓峰 黄永清. "Defect Reduction in GaAs/Si Film with InAs Quantum-dot Dislocation Filter Grown by Metalorganic Chemical Vapor Deposition." Chinese Physics B, vol. 24, no. 2, 2015, pp. 449-452, https://doi.org/10.1088/1674-1056/24/2/028101.