Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots（QDs） as dislocation filters by metalorganic chemical vapor deposition（MOCVD） is investigated in detail.The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilay...

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Published inChinese physics B Vol. 24; no. 2; pp. 449 - 452
Main Author 王俊 胡海洋 邓灿 贺云瑞 王琦 段晓峰 黄永清 任晓敏
Format Journal Article
LanguageEnglish
Published 01.02.2015
Subjects
Density
Dislocation density
Dislocations
Gallium arsenide
Gallium arsenides
InAs量子点
Indium arsenides
Metalorganic chemical vapor deposition
Quantum dots
Silicon
Silicon films
位错密度
有机金属
滤波器
砷化镓
金属有机化学气相沉积
错位
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Summary:The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots（QDs） as dislocation filters by metalorganic chemical vapor deposition（MOCVD） is investigated in detail.The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized.It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film.Compared with the dislocation density of 5×10^7 cm^-2 in the GaAs/Si sample without QDs,a density of 2×10^6 cm^-2 is achieved in the sample with QD dislocation filters.
Bibliography:Wang Jun, Hu Hai-Yang, Deng Can, He Yun-Rui, Wang Qi, Duan Xiao-Feng, Huang Yong-Qing, and Ren Xiao-Min（ Institute of Informat/on Photonics and Optical Communications, Beijing University of Posts and Telecommunications （BUPT） State Key Laboratory of Information Photonics and Optical Communications （BUPT）, Beijing 100876, China）
The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots（QDs） as dislocation filters by metalorganic chemical vapor deposition（MOCVD） is investigated in detail.The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized.It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film.Compared with the dislocation density of 5×10^7 cm^-2 in the GaAs/Si sample without QDs,a density of 2×10^6 cm^-2 is achieved in the sample with QD dislocation filters.
GaAs-on-Si growth, dislocation filter, quantum dot
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/2/028101