Resistive Switching Behavior in Amorphous Aluminum Oxide Film Grown by Chemical Vapor Deposition

• Published in: Chinese physics letters Vol. 31; no. 7; pp. 197 - 200
• Main Author: 全晓彤 朱慧超 蔡海涛 张家琦 王晓娇
• Format: Journal Article
• Language: English
• Published: 01.07.2014
• Subjects: Aluminum oxide; Chemical vapor deposition; Electrically conductive; Electrodes; Electronics; Silver; Switching; X-rays; 光电子光谱; 化学气相沉积法; 开关特性; 氧化铝膜; 生长; 电阻; 随机存取存储器; 非晶

The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2O3 prepared by metalorganic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2O3 thin film...