Resistive Switching Behavior in Amorphous Aluminum Oxide Film Grown by Chemical Vapor Deposition

The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2O3 prepared by metalorganic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2O3 thin film...

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Bibliographic Details
Published inChinese physics letters Vol. 31; no. 7; pp. 197 - 200
Main Author 全晓彤 朱慧超 蔡海涛 张家琦 王晓娇
Format Journal Article
LanguageEnglish
Published 01.07.2014
Subjects
Aluminum oxide
Chemical vapor deposition
Electrically conductive
Electrodes
Electronics
Silver
Switching
X-rays
光电子光谱
化学气相沉积法
开关特性
氧化铝膜
生长
电阻
随机存取存储器
非晶
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Summary:The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2O3 prepared by metalorganic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2O3 thin films are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and ultraviolet-visible-infrared spectroscopy, respectively. The electronic character of Ag/Al2O3/ITO structure is tested by an Agilent B1500A. The device shows a typical bipolar resistive switching behavior under the dc voltage sweep mode at room temperature. The variation ratio between HRS and LRS is larger than nearly three orders of magnitude, which indicates the good potential of this structure in future resistive random access memory （ReRAM） applications. Based on the conductive filament model, the high electric field is considered the main reason for the resistive switching according to our measurements.
Bibliography:The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2O3 prepared by metalorganic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2O3 thin films are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and ultraviolet-visible-infrared spectroscopy, respectively. The electronic character of Ag/Al2O3/ITO structure is tested by an Agilent B1500A. The device shows a typical bipolar resistive switching behavior under the dc voltage sweep mode at room temperature. The variation ratio between HRS and LRS is larger than nearly three orders of magnitude, which indicates the good potential of this structure in future resistive random access memory （ReRAM） applications. Based on the conductive filament model, the high electric field is considered the main reason for the resistive switching according to our measurements.
11-1959/O4
QUAN Xiao-Tong, ZHU Hui-Chao, CAI Hai-Tao, ZHANG Jia-Qi, WANG Xiao-Jiao（ School of Electronic Science and Technology, Dalian University of Technology, Dalian 116024）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/7/078101