Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physic...

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Published inChinese physics B Vol. 25; no. 5; pp. 321 - 325
Main Author 武辰飞 陈允峰 陆海 黄晓明 任芳芳 陈敦军 张荣 郑有炓
Format Journal Article
LanguageEnglish
Published 01.05.2016
Subjects
Asymmetry
Contact
Contact resistance
Drains
Kelvin探针
Microscopy
Scanning
Semiconductor devices
Thin film transistors
不对称
接触电阻
显微镜
薄膜晶体管
过扫描
锌氧化物
非晶
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Summary:In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.
Bibliography:amorphous indium–gallium–zinc–oxide thin-film transistors; contact resistance; surface potential
In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.
11-5639/O4
Chen-Fei Wu, Yun-Feng Chen, Hai Lu, Fang-Fang Ren, Dun-Jun Chen, Rong Zhang, Xiao-Ming Huang, and You-Dou Zheng（ 1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering Nanjing University, Nanjing 210093, China 2 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China 3 Peter Grunberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/5/057306