Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing
Silicon junctionless nanowire transistor（JNT） is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate.The performances of the transistor,i.e.,current drive,threshold voltage,subthreshold swing（SS）,and electron mobility are evaluated.The device shows good gate control abi...
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| Published in | Chinese physics B Vol. 25; no. 6; pp. 552 - 556 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2016
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| Abstract | Silicon junctionless nanowire transistor（JNT） is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate.The performances of the transistor,i.e.,current drive,threshold voltage,subthreshold swing（SS）,and electron mobility are evaluated.The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K.The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to50 K,which is attributed to the electron transport through one-dimensional（1D） subbands formed in the nanowire.Besides,the device exhibits a better low-field electron mobility of 290 cm2·V-1·s-1,implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties.This approach provides a potential application for nanoscale device patterning. |
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| AbstractList | Silicon junctionless nanowire transistor (JNT) is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate. The performances of the transistor, i.e., current drive, threshold voltage, subthreshold swing (SS), and electron mobility are evaluated. The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K. The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to 50 K, which is attributed to the electron transport through one-dimensional (1D) subbands formed in the nanowire. Besides, the device exhibits a better low-field electron mobility of 290 cm super(2).V super(-1).s super(-1), implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties. This approach provides a potential application for nanoscale device patterning. Silicon junctionless nanowire transistor（JNT） is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate.The performances of the transistor,i.e.,current drive,threshold voltage,subthreshold swing（SS）,and electron mobility are evaluated.The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K.The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to50 K,which is attributed to the electron transport through one-dimensional（1D） subbands formed in the nanowire.Besides,the device exhibits a better low-field electron mobility of 290 cm2·V-1·s-1,implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties.This approach provides a potential application for nanoscale device patterning. |
| Author | 马刘红 韩伟华 王昊 吕奇峰 张望 杨香 杨富华 |
| AuthorAffiliation | Engineering Research Center for Semiconductor Integration Technology,Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Cites_doi | 10.1021/nl304194c 10.1088/0957-4484/16/6/039 10.1109/LED.2015.2451646 10.1109/LED.2006.869941 10.1016/j.sse.2012.10.018 10.1038/nnano.2010.38 10.1016/j.nantod.2010.08.007 10.1063/1.2911727 10.1038/35089130 10.1063/1.2535504 10.1016/j.mejo.2006.07.027 10.1038/nnano.2010.15 10.1063/1.1522481 10.1109/TED.2012.2185827 10.1109/LED.2011.2161748 10.1103/PhysRevB.40.1456 10.1049/el:19880369 10.1109/TNANO.2008.920196 |
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| Notes | Silicon junctionless nanowire transistor（JNT） is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate.The performances of the transistor,i.e.,current drive,threshold voltage,subthreshold swing（SS）,and electron mobility are evaluated.The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K.The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to50 K,which is attributed to the electron transport through one-dimensional（1D） subbands formed in the nanowire.Besides,the device exhibits a better low-field electron mobility of 290 cm2·V-1·s-1,implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties.This approach provides a potential application for nanoscale device patterning. Liu-Hong Ma,Wei-Hua Han,Hao Wang,Qi-feng Lyu,Wang Zhang,Xiang Yang,Fu-Hua Yang junctionless nanowire transistor;femtosecond laser lithography;electron mobility;quantum transport 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 12 13 14 15 16 17 18 19 Zhang Y M (20) 2014; 35 1 2 3 4 5 Juodkazis1 S (6) 2005; 16 7 8 Wang H (10) 2014; 23 9 |
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| Snippet | Silicon junctionless nanowire transistor（JNT） is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate.The performances of the... Silicon junctionless nanowire transistor (JNT) is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate. The performances of the... |
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| SubjectTerms | Devices Electron transport Femtosecond Gates Nanowires Semiconductor devices Silicon substrates Transistors 制作 晶体管 栅极电压 激光直写 电子输运性质 电子迁移率 硅纳米线 飞秒激光 |
| Title | Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing |
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