Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing

Silicon junctionless nanowire transistor（JNT） is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate.The performances of the transistor,i.e.,current drive,threshold voltage,subthreshold swing（SS）,and electron mobility are evaluated.The device shows good gate control abi...

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Published inChinese physics B Vol. 25; no. 6; pp. 552 - 556
Main Author 马刘红 韩伟华 王昊 吕奇峰 张望 杨香 杨富华
Format Journal Article
LanguageEnglish
Published 01.06.2016
Subjects
Devices
Electron transport
Femtosecond
Gates
Nanowires
Semiconductor devices
Silicon substrates
Transistors
制作
晶体管
栅极电压
激光直写
电子输运性质
电子迁移率
硅纳米线
飞秒激光
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Summary:Silicon junctionless nanowire transistor（JNT） is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate.The performances of the transistor,i.e.,current drive,threshold voltage,subthreshold swing（SS）,and electron mobility are evaluated.The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K.The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to50 K,which is attributed to the electron transport through one-dimensional（1D） subbands formed in the nanowire.Besides,the device exhibits a better low-field electron mobility of 290 cm2·V-1·s-1,implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties.This approach provides a potential application for nanoscale device patterning.
Bibliography:Silicon junctionless nanowire transistor（JNT） is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate.The performances of the transistor,i.e.,current drive,threshold voltage,subthreshold swing（SS）,and electron mobility are evaluated.The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K.The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to50 K,which is attributed to the electron transport through one-dimensional（1D） subbands formed in the nanowire.Besides,the device exhibits a better low-field electron mobility of 290 cm2·V-1·s-1,implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties.This approach provides a potential application for nanoscale device patterning.
Liu-Hong Ma,Wei-Hua Han,Hao Wang,Qi-feng Lyu,Wang Zhang,Xiang Yang,Fu-Hua Yang
junctionless nanowire transistor;femtosecond laser lithography;electron mobility;quantum transport
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/6/068103