杨辉, 卢. 郑. 王. 陈. 李. 陆. (2015). GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy. Chinese physics letters, 32(5), 111-114. https://doi.org/10.1088/0256-307X/32/5/057301
Chicago Style (17th ed.) Citation杨辉, 卢建娅 郑新和 王乃明 陈曦） 李宝吉 陆书龙. "GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy." Chinese Physics Letters 32, no. 5 (2015): 111-114. https://doi.org/10.1088/0256-307X/32/5/057301.
MLA (9th ed.) Citation杨辉, 卢建娅 郑新和 王乃明 陈曦） 李宝吉 陆书龙. "GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy." Chinese Physics Letters, vol. 32, no. 5, 2015, pp. 111-114, https://doi.org/10.1088/0256-307X/32/5/057301.