GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy

We demonstrate nearly i e V GaN0.03As0.97 /In0.09 Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structural quality. Meanwhile, the annealing conditions...

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Published inChinese physics letters Vol. 32; no. 5; pp. 111 - 114
Main Author 卢建娅 郑新和 王乃明 陈曦） 李宝吉 陆书龙 杨辉
Format Journal Article
LanguageEnglish
Published 01.05.2015
Subjects
Current density
Extrapolation
GANAS
Molecular beam epitaxy
Photoluminescence
Photovoltaic cells
Solar cells
Superlattices
Voltage
全固态
分子束外延生长
含氮量
太阳能电池
短路电流密度
砷化铟镓
超晶格
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/5/057301

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Summary:We demonstrate nearly i e V GaN0.03As0.97 /In0.09 Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a pho- toluminescence （PL） at a low temperature. However, no PL signal is detected at room temperature, which could be reflected by a lower open-circuit voltage of the fabricated devices. The GaN0.03As0.97/In0.09Ga0.91As super- lattice solar cells show a reasonably-high short-circuit current density （Jsc） of over lOmA/cm2. Eurthermore, a concentration behavior is measured, which shows a linear relationship between Jsc and concentration ratios. The extrapolated ideality factor and saturated current density by the concentration action are in good agreement with that extracted by the dark case of the p-i-n diodes.
Bibliography:We demonstrate nearly i e V GaN0.03As0.97 /In0.09 Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a pho- toluminescence （PL） at a low temperature. However, no PL signal is detected at room temperature, which could be reflected by a lower open-circuit voltage of the fabricated devices. The GaN0.03As0.97/In0.09Ga0.91As super- lattice solar cells show a reasonably-high short-circuit current density （Jsc） of over lOmA/cm2. Eurthermore, a concentration behavior is measured, which shows a linear relationship between Jsc and concentration ratios. The extrapolated ideality factor and saturated current density by the concentration action are in good agreement with that extracted by the dark case of the p-i-n diodes.
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LU Jian-Ya, ZHENG Xin-He, WANG Nai-Ming,CHEN Xi,LI Bao-Ji, LU Shu-Long,YANG Hui（ 1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 2School of MateriMs Science and Engineering, Shanghai University, Shanghai 200444 3 Department of Physics, College of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083）
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/5/057301