Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition

A ZrN contact on a Ge substrate can alleviate the intrinsic Fermi-level pinning (FLP) position toward conduction band edge, which is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the interfaces. Since the a-IL could be retained on the Ge surface, we demonstrated a wide range...

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Published inSemiconductor science and technology Vol. 33; no. 11; pp. 114011 - 114017
Main Authors Yamamoto, K, Noguchi, R, Mitsuhara, M, Nishida, M, Hara, T, Wang, D, Nakashima, H
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2018
Subjects
Fermi level pinning
germanium
Schottky barrier height
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Summary:A ZrN contact on a Ge substrate can alleviate the intrinsic Fermi-level pinning (FLP) position toward conduction band edge, which is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the interfaces. Since the a-IL could be retained on the Ge surface, we demonstrated a wide range Schottky barrier height (SBH) control for metal/a-IL/Ge contacts. The sputtering power for ZrN affects the SBH, pinning factor (S), and effective charge neutral level. A high S value of 0.26 was achieved, which is comparable to that of metal/Si contacts. A model was proposed for explaining the mechanism of this effective FLP alleviation.
Bibliography:SST-104912.R1
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/aae4bd