Effects of graphene defects on Co cluster nucleation and intercalation

Four kinds of defects are observed in graphene grown on Ru (0001) surfaces. After cobalt deposition at room tem- perature, the cobalt nanoclusters are preferentially located at the defect position. By annealing at 530 ℃, cobalt atoms intercalate at the interface of Graphene/Ru (0001) through the def...

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Published inChinese physics B Vol. 23; no. 8; pp. 568 - 571
Main Authors Xu, Wen-Yan, Huang, Li, Que, Yan-De, Lin, Xiao, Wang, Ye-Liang, Du, Shi-Xuan, Gao, Hong-Jun
Format Journal Article
LanguageEnglish
Published 01.08.2014
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Summary:Four kinds of defects are observed in graphene grown on Ru (0001) surfaces. After cobalt deposition at room tem- perature, the cobalt nanoclusters are preferentially located at the defect position. By annealing at 530 ℃, cobalt atoms intercalate at the interface of Graphene/Ru (0001) through the defects. Further deposition and annealing increase the sizes of intercalated Co islands. This provides a method of controlling the arrangement of cobalt nanoclusters and also the den- sity and the sizes of intercalated cobalt islands, which would find potential applications in catalysis industries, magnetism storage, and magnetism control in future information technology.
Bibliography:Four kinds of defects are observed in graphene grown on Ru (0001) surfaces. After cobalt deposition at room tem- perature, the cobalt nanoclusters are preferentially located at the defect position. By annealing at 530 ℃, cobalt atoms intercalate at the interface of Graphene/Ru (0001) through the defects. Further deposition and annealing increase the sizes of intercalated Co islands. This provides a method of controlling the arrangement of cobalt nanoclusters and also the den- sity and the sizes of intercalated cobalt islands, which would find potential applications in catalysis industries, magnetism storage, and magnetism control in future information technology.
graphene, defects, cobalt, intercalation, scanning tunneling microscopy
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/8/088108