Low phase noise GaAs HBT VCO in Ka-band

Design and fabrication of a Ka-band voltage-controlled oscillator(VCO) using commercially available 1-μm GaAs heterojunction bipolar transistor technology is presented.A fully differential common-emitter configuration with a symmetric capacitance with a symmetric inductance tank structure is employe...

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Published inJournal of semiconductors Vol. 36; no. 2; pp. 120 - 123
Main Author 严婷 张玉明 吕红亮 张义门 武岳 刘一峰
Format Journal Article
LanguageEnglish
Published 01.02.2015
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Summary:Design and fabrication of a Ka-band voltage-controlled oscillator(VCO) using commercially available 1-μm GaAs heterojunction bipolar transistor technology is presented.A fully differential common-emitter configuration with a symmetric capacitance with a symmetric inductance tank structure is employed to reduce the phase noise of the VCO,and a novel π-feedback network is applied to compensate for the 180° phase shift.The on-wafer test shows that the VCO exhibits a phase noise of-96.47 dBc/Hz at a 1 MHz offset and presents a tuning range from 28.312 to 28.695 GHz.The overall dc current consumption of the VCO is 18 mA with a supply voltage of-6 V.The chip area of the VCO is 0.7×0.7 mm^2.
Bibliography:VCO; GaAs HBT; common-emitter; phase noise;π-feedback
Design and fabrication of a Ka-band voltage-controlled oscillator(VCO) using commercially available 1-μm GaAs heterojunction bipolar transistor technology is presented.A fully differential common-emitter configuration with a symmetric capacitance with a symmetric inductance tank structure is employed to reduce the phase noise of the VCO,and a novel π-feedback network is applied to compensate for the 180° phase shift.The on-wafer test shows that the VCO exhibits a phase noise of-96.47 dBc/Hz at a 1 MHz offset and presents a tuning range from 28.312 to 28.695 GHz.The overall dc current consumption of the VCO is 18 mA with a supply voltage of-6 V.The chip area of the VCO is 0.7×0.7 mm^2.
Yan Ting, Zhang Yuming, Lv Hongliang, Zhang Yimen , Wu Yue,Liu Yifeng
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/36/2/025001