Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

• Published in: Semiconductor science and technology Vol. 33; no. 12; pp. 125019 - 125025
• Main Authors: Tsai, Yen-Lin, Chen, Jone F, Shen, Shang-Feng, Hsu, Hao-Tang, Kao, Chia-Yu, Chang, Kuei-Fen, Hwang, Hann-Ping
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.12.2018
• Subjects: drift region; high-voltage MOS transistors; hot-carrier reliability
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/1361-6641/aaeb06

The effect of doping concentration in the n− drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n− drift doping concentration improves device characteristics. In addition, a proper increase in the n− drift doping concentration reduces hot-carrier induced device degradation. Technology computer-aided design simulation results suggest that the impact of hot-carrier induced interface charge generation on device degradation is alleviated for a higher n− drift doping concentration. Such a result can explain the reduction in hot-carrier induced device degradation for the device with a higher doping concentration in the n− drift region.