Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling
We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization dens...
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Published in | Chinese physics B Vol. 25; no. 2; pp. 399 - 405 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.02.2016
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Online Access | Get full text |
ISSN | 1674-1056 2058-3834 1741-4199 |
DOI | 10.1088/1674-1056/25/2/027201 |
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Abstract | We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase(or decrease) with the decrease(or increase) of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection. |
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AbstractList | We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase (or decrease) with the decrease (or increase) of the charge current density, in contrast to that found in normal spin-orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection. We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase(or decrease) with the decrease(or increase) of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection. |
Author | 刘乃清 黄立捷 王瑞强 胡梁宾 |
AuthorAffiliation | Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China |
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Cites_doi | 10.1016/j.physrep.2010.04.002 10.1103/PhysRevB.89.134517 10.1103/PhysRevB.61.1555 10.1103/PhysRev.100.580 10.1103/PhysRevLett.74.1657 10.1103/PhysRevB.81.075312 10.1103/PhysRevB.84.195448 10.1103/PhysRevB.25.4515 10.1103/RevModPhys.80.1337 10.1038/nature07871 10.7498/aps.63.217202 10.1103/PhysRevB.81.113304 10.1103/PhysRevLett.92.126603 10.1016/0038-1098(90)90963-C 10.1103/PhysRevB.81.125302 10.1038/nphys2383 10.1103/PhysRevLett.108.077002 10.1007/978-3-662-05003-3 10.1103/PhysRevB.86.054521 10.1103/PhysRevB.81.085303 10.1126/science.1087128 10.1209/0295-5075/108/67013 10.1103/PhysRevLett.94.047204 10.1103/PhysRevLett.99.106601 10.1103/PhysRevLett.101.046402 10.1103/PhysRevLett.102.196802 10.1103/PhysRevB.80.041311 10.1038/nphys551 10.1126/science.1105514 10.1103/PhysRevLett.102.116402 10.1088/0022-3719/17/33/015 10.1063/1.1994930 10.1103/PhysRevB.85.035321 10.1103/PhysRevLett.106.237201 10.1007/b13586 10.1103/RevModPhys.76.323 10.1103/PhysRevLett.97.067007 |
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Notes | We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase(or decrease) with the decrease(or increase) of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection. Nai-Qing Liu, Li-Jie Huang, Rui-Qiang Wang, and Liang-Bin Hu(1 Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China) semiconductor/superconductor junctions, spin-orbit coupling, Andreev reflection, current-induced spin polarization 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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References | 22 23 24 26 27 29 30 31 10 32 11 33 12 34 13 35 14 15 37 16 38 17 18 19 1 2 3 4 5 Yang C L (6) 2007; 36 Bychkov Y (36) 1984; 17 7 8 9 Shi J R (25) 2006; 35 Xu L T (28) 2014; 108 40 Tang H Z (39) 2015; 24 20 21 |
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Snippet | We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong... We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong... |
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SubjectTerms | Charge density Density Joining Polarization Reflection Semiconductors Spin-orbit interactions Superconductor junctions 半导体纳米线 半导体结构 极化电流 自旋-轨道耦合 自旋轨道耦合 超导体 非平衡态 |
Title | Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling |
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