Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling

We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization dens...

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Published inChinese physics B Vol. 25; no. 2; pp. 399 - 405
Main Author 刘乃清 黄立捷 王瑞强 胡梁宾
Format Journal Article
LanguageEnglish
Published 01.02.2016
Subjects
Charge density
Density
Joining
Polarization
Reflection
Semiconductors
Spin-orbit interactions
Superconductor junctions
半导体纳米线
半导体结构
极化电流
自旋-轨道耦合
自旋轨道耦合
超导体
非平衡态
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/25/2/027201

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Summary:We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase（or decrease） with the decrease（or increase） of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.
Bibliography:We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase（or decrease） with the decrease（or increase） of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.
Nai-Qing Liu, Li-Jie Huang, Rui-Qiang Wang, and Liang-Bin Hu（1 Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China）
semiconductor/superconductor junctions, spin-orbit coupling, Andreev reflection, current-induced spin polarization
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/2/027201