Relaxation rate of manganese ion in the presence of a two-dimensional electron gas

• Published in: Physica status solidi. C Vol. 2; no. 8; pp. 3149 - 3152
• Main Authors: Souto, E., Nunes, O. A. C., Fonseca, A. L. A., Agrello, D. A., da Silva Jr, E. F.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.05.2005; WILEY‐VCH Verlag
• Subjects: 75.30.Hx; 75.70.Cn; 75.75.+a
• ISSN: 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200460736

In this work, the spin relaxation of Mn ions in a (Cd,Mn)Te quantum well with quasi‐two‐dimensional carriers (Q2DEG) in an external, small (non‐quantizing), magnetic field is investigated. A calculation of the spin‐flip scattering rate shows that the Mn spin relaxation rate is proportional to the coupling constant squared, the density of states squared, and the electron temperature, the so‐called Korringa relaxation rate. It was found that for small Mn ion concentration, the relaxation time is in good agreement with experimental results. Moreover, the relaxation rate scales with L‐2, with L being the well width, and it can be enhanced over its value in bulk. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)