The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

• Published in: Physica status solidi. C Vol. 5; no. 12; pp. 3724 - 3727
• Main Authors: Tyschenko, I. E., Voelskow, M., Cherkov, A. G., Popov, V. P.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.12.2008; WILEY‐VCH Verlag
• Subjects: 61.72.uf; 64.75.−g; 68.35.Fx; 73.61.Cw
• ISSN: 1862-6351; 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200780120

The behaviour of germanium implanted into the SiO2 layers in the vicinity of the bonding interface of silicon‐on‐insulator (SOI) structures has been studied. The enhanced segregation of the implanted Ge atoms at the Si/SiO2 bonding interface has been observed. Segregated Ge atoms form the layer, which is coherent with the silicon lattice. It is suggested that the formation of intermediate Ge layer is mediated by the occurrence of liquid Ge phase. The effect of Ge on the Hall mobility of holes in the 25 nm thick SOI layer was studied. An increase in the hole mobility by a factor of three was obtained in the SiGe‐on insulator structures in comparison with that measured in the respective Ge‐free SOI films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)