Extraction of interface state density and resistivity of suspended p-type silicon nanobridges

• Published in: Journal of semiconductors Vol. 34; no. 5; pp. 7 - 12
• Main Author: 张加宏 刘清倦 葛益娴 顾芳 李敏 冒晓莉 曹鸿霞
• Format: Journal Article
• Language: English
• Published: 01.05.2013
• Subjects: Bending; Deformation; Density; Electrical resistivity; Nanocomposites; Nanomaterials; Nanostructure; p型硅; Silicon; 偏置电压; 弯曲变形; 悬浮; 提取; 电阻率; 界面态密度; 纳米

The evaluation of the influence of the bending deformation of silicon nanobridges on their electrical properties is crucial for sensing and actuating applications. A combined theory/experimental approach for de- termining the resistivity and the density of interface states of the bending silicon nan...