Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well （MQW） solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the e...

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Published inChinese physics B Vol. 23; no. 6; pp. 629 - 634
Main Author 杨静 赵德刚 江德生 刘宗顺 陈平 李亮 吴亮亮 乐伶聪 李晓静 何晓光 王辉 朱建军 张书明 张宝顺 杨辉
Format Journal Article
LanguageEnglish
Published 01.06.2014
Subjects
Electrical resistivity
Gallium nitrides
Indium gallium nitrides
InGaN
Photovoltaic cells
Polarization
Reduction
Solar cells
Spectral response
偏振
光谱响应
外部量子效率
多量子阱
太阳能电池
高电阻率
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Summary:Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well （MQW） solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency （EQE） of the solar cells increases in a low energy spectral range （λ 〉 370 nm） when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths （λ 〉 370 nm）.
Bibliography:Yang Jing, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Li Liang, Wu Liang-Liang, Le Ling-Cong, Li Xiao-Jing, He Xiao-Guang, Wang Hui, Zhu Jian-Jun, Zhang Shu-Ming, Zhang Bao-Shun, Yang Hui（ a） State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China b） Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well （MQW） solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency （EQE） of the solar cells increases in a low energy spectral range （λ 〉 370 nm） when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths （λ 〉 370 nm）.
nitride materials, external quantum efficiency, polarization, p-type GaN resistivity
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/6/068801