The fabrication and characterization of 4H-SiC power UMOSFETs

The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors（UMOSFETs） is reported in this paper.The device has a 15-μm thick drift layer with 3×10^15 cm^-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 22; no. 2; pp. 426 - 428
Main Author 宋庆文 张玉明 韩吉胜 Philip Tanner Sima Dimitrijev 张义门 汤晓燕 郭辉
Format Journal Article
LanguageEnglish
Published 01.02.2013
Subjects
4H-SiC
Blocking
Channels
Devices
Drift
Electric potential
Extrapolation
Field effect transistors
Voltage
制备
功率
半导体场效应晶体管
掺杂浓度
漏电流密度
表征
通道长度
Online AccessGet full text

Cover

More Information
Summary:The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors（UMOSFETs） is reported in this paper.The device has a 15-μm thick drift layer with 3×10^15 cm^-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density is 65.4 A/cm^2 at Vg = 40 V and VDS = 15 V.The measured threshold voltage（Vth） is 5.5 V by linear extrapolation from the transfer characteristics.A specific on-resistance（Rsp-on） is 181 mΩ·cm^2 at Vg = 40 V and a blocking voltage（BV） is 880 V（IDS = 100 μA@880V） at Vg = 0 V.
Bibliography:The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors（UMOSFETs） is reported in this paper.The device has a 15-μm thick drift layer with 3×10^15 cm^-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density is 65.4 A/cm^2 at Vg = 40 V and VDS = 15 V.The measured threshold voltage（Vth） is 5.5 V by linear extrapolation from the transfer characteristics.A specific on-resistance（Rsp-on） is 181 mΩ·cm^2 at Vg = 40 V and a blocking voltage（BV） is 880 V（IDS = 100 μA@880V） at Vg = 0 V.
UMOSFETs,4H-SiC,specific on-resistance,blocking voltage
11-5639/O4
Song Qing-Wen, Zhang Yu-Ming , Han Ji-Sheng , Philip Tanner , Sima Dimitrijev , Zhang Yi-Men , Tang Xiao-Yan , Guo Hui（1） school of Technical Physics, Xidian University, Xi＇ an 710071, China ;2 ） Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi ＇ an 710071, China ;3） Queensland Micro and Nanotechnology Center, Griffith University, Nathan 4111, Australia ;4） Griffith School of Engineering, Griffith University, Nathan 4111, Australia
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/2/027302