Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p-i-n tunneling FETs
We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors （TFETs）. The models are based on non-equilibrium Green＇s functions （NEGF） solved self-consistently with...
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| Published in | Journal of semiconductors Vol. 35; no. 6; pp. 47 - 52 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2014
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| Online Access | Get full text |
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| Abstract | We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors （TFETs）. The models are based on non-equilibrium Green＇s functions （NEGF） solved self-consistently with 3D-Poisson＇s equations. For the first time, hetero gate dielectric and single LDD TFETs （SL-HTFETs） are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p ＋ 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications. |
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| AbstractList | We perform a theoretical study of the effects of the lightly doped drain (LDD) and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors (TFETs). The models are based on non-equilibrium Green's functions (NEGF) solved self-consistently with 3D-Poisson's equations. For the first time, hetero gate dielectric and single LDD TFETs (SL-HTFETs) are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3 p + 1 family have better switching characteristics than those from the 3 p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications. We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors （TFETs）. The models are based on non-equilibrium Green＇s functions （NEGF） solved self-consistently with 3D-Poisson＇s equations. For the first time, hetero gate dielectric and single LDD TFETs （SL-HTFETs） are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p ＋ 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications. |
| Author | 王伟 岳工舒 杨晓 张露 张婷 |
| AuthorAffiliation | College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China |
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| Cites_doi | 10.1063/1.2775917 10.1109/LED.2007.901273 10.1109/TED.2010.2065809 10.1109/TED.2010.2101603 10.1063/1.1563298 10.1016/j.physe.2007.06.020 10.1126/science.1184289 10.1038/nature09405 10.1109/TED.2008.2008375 10.1016/0022-3697(60)90035-4 10.1103/PhysRevLett.81.2506 10.1103/RevModPhys.81.109 10.1126/science.1102896 10.1126/science.1150878 10.1038/nature04235 10.1109/LED.2007.901680 10.1063/1.2191420 10.1016/j.mee.2013.04.011 10.1103/PhysRevB.73.235411 10.1049/el:19980800 10.1126/science.1158877 10.1021/nl101724k 10.1109/LED.2007.891668 10.1109/TED.2008.2011934 |
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| DocumentTitleAlternate | Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p-i-n tunneling FETs |
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| Notes | We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors （TFETs）. The models are based on non-equilibrium Green＇s functions （NEGF） solved self-consistently with 3D-Poisson＇s equations. For the first time, hetero gate dielectric and single LDD TFETs （SL-HTFETs） are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p ＋ 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications. Wang Wei, Yue Gongshu, Yang Xiao, Zhang Lu, Zhang Ying College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China 11-5781/TN GNRFETs; non-equilibrium Green＇s functions （NEGF）; p-i-n tunneling field-effect transistor（TFET）; GNR width; lightly doped drain; hetero gate dielectric ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 22 23 24 25 26 Li X L (2) 2008; 319 10 11 12 Klymenko Y (16) 2008; 77 14 15 17 18 19 Wu Y (13) 2010; 10 1 3 4 5 6 7 8 9 20 21 |
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| Snippet | We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling... We perform a theoretical study of the effects of the lightly doped drain (LDD) and high-k dielectric on the performances of double gate p-i-n tunneling... |
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| StartPage | 47 |
| SubjectTerms | Devices Dielectrics Doping Gates Graphene LDD Logic Nanostructure Semiconductors Tunneling 双门 场效应晶体管 掺杂石墨 栅介质 纳米带 量子模拟 隧道 |
| Title | Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p-i-n tunneling FETs |
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