Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p-i-n tunneling FETs

We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors （TFETs）. The models are based on non-equilibrium Green＇s functions （NEGF） solved self-consistently with...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 6; pp. 47 - 52
Main Author 王伟 岳工舒 杨晓 张露 张婷
Format Journal Article
LanguageEnglish
Published 01.06.2014
Subjects
Devices
Dielectrics
Doping
Gates
Graphene
LDD
Logic
Nanostructure
Semiconductors
Tunneling
双门
场效应晶体管
掺杂石墨
栅介质
纳米带
量子模拟
隧道
Online AccessGet full text

Cover

More Information
Summary:We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors （TFETs）. The models are based on non-equilibrium Green＇s functions （NEGF） solved self-consistently with 3D-Poisson＇s equations. For the first time, hetero gate dielectric and single LDD TFETs （SL-HTFETs） are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p ＋ 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications.
Bibliography:We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors （TFETs）. The models are based on non-equilibrium Green＇s functions （NEGF） solved self-consistently with 3D-Poisson＇s equations. For the first time, hetero gate dielectric and single LDD TFETs （SL-HTFETs） are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p ＋ 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications.
Wang Wei, Yue Gongshu, Yang Xiao, Zhang Lu, Zhang Ying College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
11-5781/TN
GNRFETs; non-equilibrium Green＇s functions （NEGF）; p-i-n tunneling field-effect transistor（TFET）; GNR width; lightly doped drain; hetero gate dielectric
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/35/6/064006