The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET

The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and exp...

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Published inChinese physics B Vol. 22; no. 2; pp. 539 - 544
Main Author 王斌 张鹤鸣 胡辉勇 张玉明 周春宇 王冠宇 李妤晨
Format Journal Article
LanguageEnglish
Published 01.02.2013
Subjects
Doping
Mathematical models
Metal oxide semiconductors
Metal oxides
MOSFETs
MOS场效应晶体管
PMOSFET
Semiconductors
Silicon germanides
Threshold voltage
平带电压
应变硅
掺杂
衬底
金属氧化物半导体场效应晶体管
阈值电压
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Summary:The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained.The proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET.
Bibliography:Wang Bin , Zhang He-Ming , Hu Hui-Yong , Zhang Yu-Ming , Zhou Chun-Yu , Wang Guan-Yu , Li Yu-Chen（ Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇ an 710071, China）
The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained.The proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET.
strained-Si pMOSFET,flatband voltage,threshold voltage,doping
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/2/028503