Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

hnpurity-free intermixing of InGaAsP multiple quantum wells （MQW） using sputtering Cu/Si02 layers followed by rapid thermal processing （RTP） is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lase...

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Bibliographic Details
Published inChinese physics letters Vol. 31; no. 4; pp. 64 - 67
Main Authors Cui, Xiao, Zhang, Can, Liang, Song, Zhu, Hong-Liang, Hou, Lian-Ping
Format Journal Article
LanguageEnglish
Published 01.04.2014
Subjects
Annealing
Copper
Demand
InGaAsP
InP
Integrated circuits
Lasers
Modulators
Photonics
Sputtering
光子集成电路
增强型
工程
带隙
杂质
混插
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Summary:hnpurity-free intermixing of InGaAsP multiple quantum wells （MQW） using sputtering Cu/Si02 layers followed by rapid thermal processing （RTP） is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, pho- todetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172nm is realized with an anneal- ing condition of 750~C and 200s. The improved technique is promising for the fabrication of the active/passive optoeleetronic components on a single wafer with simple process and low cost.
Bibliography:hnpurity-free intermixing of InGaAsP multiple quantum wells （MQW） using sputtering Cu/Si02 layers followed by rapid thermal processing （RTP） is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, pho- todetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172nm is realized with an anneal- ing condition of 750~C and 200s. The improved technique is promising for the fabrication of the active/passive optoeleetronic components on a single wafer with simple process and low cost.
11-1959/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/4/044204