InAsSbP quantum dot mid-IR photodetectors operating at room temperature

•InAsSbP QDs were grown by a modified LPE.•Photoresponse spectrum shift towards longer wavelengths was observed due to QDs.•Nonlinear current–voltage and capacitance–voltage characteristics were investigated.•Increased resistance change was observed for photodetector with QDs. A modified liquid phas...

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Bibliographic Details
Published inInfrared physics & technology Vol. 70; pp. 12 - 14
Main Authors Harutyunyan, V.G., Gambaryan, K.M., Aroutiounian, V.M., Harutyunyan, I.G.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2015
Subjects
InAsSbP
Low bias
Mid-IR
Photoconductive cells
Quantum dots
Photoconductive cells
Low bias
Mid-IR
Quantum dots
InAsSbP
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Summary:•InAsSbP QDs were grown by a modified LPE.•Photoresponse spectrum shift towards longer wavelengths was observed due to QDs.•Nonlinear current–voltage and capacitance–voltage characteristics were investigated.•Increased resistance change was observed for photodetector with QDs. A modified liquid phase epitaxy was applied to grow InAsSbP quantum dots on InAs (100) substrate. Low bias and room temperature photoconductive cells with InAsSbP nanostructures were developed. In comparison with InAs based photoconductive cell, a red shift and additional peaks at 3.4μm, 3.68μm and 3.89μm on photoresponse spectrum of quantum dot photoconductive cell were observed. Additionally, the spectrum dependence on bias voltage at room temperature is presented. Under irradiation of 3.39μm, the surface resistance was reduced up to 7% at power density of 0.07W/cm2. At the bias of 8mV current responsivity of 0.2mA/W was measured.
ISSN:1350-4495
1879-0275
DOI:10.1016/j.infrared.2014.11.008