High-efficiency S-band harmonic tuning GaN amplifier

• Published in: Chinese physics B Vol. 23; no. 3; pp. 504 - 508
• Main Author: 曹梦逸 张凯 陈永和 张进成 马晓华 郝跃
• Format: Journal Article
• Language: English
• Published: 01.03.2014
• Subjects: Amplifiers; Gallium nitrides; Harmonics; High electron mobility transistors; Nitrides; Semiconductor devices; Silicon carbide; S波段; Tuning; 功率放大器; 操作条件; 氮化镓; 调谐; 谐波处理; 输出功率; 高电子迁移率晶体管
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/23/3/037305

In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.