High-efficiency S-band harmonic tuning GaN amplifier

In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier....

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Bibliographic Details
Published inChinese physics B Vol. 23; no. 3; pp. 504 - 508
Main Author 曹梦逸 张凯 陈永和 张进成 马晓华 郝跃
Format Journal Article
LanguageEnglish
Published 01.03.2014
Subjects
Amplifiers
Gallium nitrides
Harmonics
High electron mobility transistors
Nitrides
Semiconductor devices
Silicon carbide
S波段
Tuning
功率放大器
操作条件
氮化镓
调谐
谐波处理
输出功率
高电子迁移率晶体管
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/23/3/037305

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Summary:In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.
Bibliography:power amplifier, GaN high-electron-mobility transistor （HEMT）, high efficiency, harmonic manipulation
In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/3/037305