New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer

A new 4H silicon carbide metal semiconductor field-effect transistor （4H-SiC MESFET） structure with a buffer layer between the gate and the channel layer is proposed in this paper for high power microwave applications. The physics-based analytical models for calculating the performance of the propos...

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Bibliographic Details
Published inChinese physics B Vol. 21; no. 1; pp. 419 - 425
Main Author 张现军 杨银堂 段宝兴 陈斌 柴常春 宋坤
Format Journal Article
LanguageEnglish
Published 2012
Subjects
4H-SiC
Buffer layers
Channels
Field effect transistors
Gates
Mathematical models
MESFET
MESFETs
Microwaves
Semiconductors
Silicon carbide
与门
性能分析模型
碳化硅
缓冲层
通道
金属半导体场效应晶体管
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/1/017201

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Summary:A new 4H silicon carbide metal semiconductor field-effect transistor （4H-SiC MESFET） structure with a buffer layer between the gate and the channel layer is proposed in this paper for high power microwave applications. The physics-based analytical models for calculating the performance of the proposed device are obtained by solving one- and two-dimensional Poisson＇s equations. In the models, we take into account not only two regions under the gate but also a third high field region between the gate and the drain which is usually omitted. The direct-current and the alternating- current performances for the proposed 4H-SiC MESFET with a buffer layer of 0.2 ~tm are calculated. The calculated results are in good agreement with the experimental data. The current is larger than that of the conventional structure. The cutoff frequency （fT） and the maximum oscillation frequency （fmax） are 20.4 GHz and 101.6 GHz, respectively, which are higher than 7.8 GHz and 45.3 GHz of the conventional structure. Therefore, the proposed 4H-SiC MESFET structure has better power and microwave performances than the conventional structure.
Bibliography:Zhang Xian-Jun, Yang Yin-Tang, Duan Bao-Xing, then Bin, Chai Chang-Chun, and Song Kun（ 373# Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education School of Mieroeleetronics, Xidian University, Xi＇an 710071, China）
A new 4H silicon carbide metal semiconductor field-effect transistor （4H-SiC MESFET） structure with a buffer layer between the gate and the channel layer is proposed in this paper for high power microwave applications. The physics-based analytical models for calculating the performance of the proposed device are obtained by solving one- and two-dimensional Poisson＇s equations. In the models, we take into account not only two regions under the gate but also a third high field region between the gate and the drain which is usually omitted. The direct-current and the alternating- current performances for the proposed 4H-SiC MESFET with a buffer layer of 0.2 ~tm are calculated. The calculated results are in good agreement with the experimental data. The current is larger than that of the conventional structure. The cutoff frequency （fT） and the maximum oscillation frequency （fmax） are 20.4 GHz and 101.6 GHz, respectively, which are higher than 7.8 GHz and 45.3 GHz of the conventional structure. Therefore, the proposed 4H-SiC MESFET structure has better power and microwave performances than the conventional structure.
4H silicon carbide, metal semiconductor field-effect transistor, Poisson＇s equation
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/1/017201