Impact of Ge doping on MOVPE grown InGaN layers

•InGaN:Ge layer with 8 % of In and 1020 cm−3 free carriers concentration was grown.•Decrease in GeH4 flow resulted in a higher In content of InGaN layers.•Ge incorporation into intentionally undoped InGaN layers was found.•GeH4 diluted in H2 is not harmful for InGaN growth with In content around 8 %...

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Published inJournal of crystal growth Vol. 604; p. 127043
Main Authors Hubáček, T., Kuldová, K., Gedeonová, Z., Hájek, F., Košutová, T., Banerjee, S., Hubík, P., Pangrác, J., Vaněk, T., Hospodková, A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.02.2023
Subjects
A1. Doping
A1. Photoluminescence
A3. MOVPE
B1. Germanium
B1. InGaN
B1. Nitrides
B1. InGaN
A1. Doping
B1. Germanium
B1. Nitrides
A3. MOVPE
A1. Photoluminescence
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Summary:•InGaN:Ge layer with 8 % of In and 1020 cm−3 free carriers concentration was grown.•Decrease in GeH4 flow resulted in a higher In content of InGaN layers.•Ge incorporation into intentionally undoped InGaN layers was found.•GeH4 diluted in H2 is not harmful for InGaN growth with In content around 8 %. The impact of Ge doping on InGaN layers grown with the Metal Organic Vapor Phase Epitaxy technique is investigated, with the main focus on the influence of GeH4 flow and Ga/III ratio on the luminescence, electrical and structural properties of InGaN:Ge layers. It is shown that at doping levels above 1019 cm-3 an increase in GeH4 flow results in a decrease in the In content and lower concentration of free carrier density in InGaN layers. On the contrary, the change of Ga/III ratio has no influence on the luminescence and structural properties. An unintentional Ge doping of InGaN layers due to the Ge memory effect or back diffusion is discussed.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2022.127043