李肇基, 付. 张. 罗. (2013). A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate. Chinese physics B, 22(7), 473-477. https://doi.org/10.1088/1674-1056/22/7/077309
Chicago Style (17th ed.) Citation李肇基, 付强 张波 罗小蓉. "A Dual-gate and Dielectric-inserted Lateral Trench Insulated Gate Bipolar Transistor on a Silicon-on-insulator Substrate." Chinese Physics B 22, no. 7 (2013): 473-477. https://doi.org/10.1088/1674-1056/22/7/077309.
MLA (9th ed.) Citation李肇基, 付强 张波 罗小蓉. "A Dual-gate and Dielectric-inserted Lateral Trench Insulated Gate Bipolar Transistor on a Silicon-on-insulator Substrate." Chinese Physics B, vol. 22, no. 7, 2013, pp. 473-477, https://doi.org/10.1088/1674-1056/22/7/077309.
Warning: These citations may not always be 100% accurate.