A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

In this paper, a novel dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor （DGDI LTIGBT） structure, which features a double extended trench gate and a dielectric inserted in the drift region, is proposed and discussed. The device can not only decrease the specific on-r...

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Bibliographic Details
Published inChinese physics B Vol. 22; no. 7; pp. 473 - 477
Main Author 付强 张波 罗小蓉 李肇基
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
Breakdown
Delay
Dielectrics
Electric potential
Insulated gate bipolar transistors
Simulation
Trenches
Voltage
Voltage drop
介电
关断损耗
导通电阻
栅极
沟槽
硅衬底
绝缘体
绝缘栅双极晶体管
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/7/077309

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Summary:In this paper, a novel dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor （DGDI LTIGBT） structure, which features a double extended trench gate and a dielectric inserted in the drift region, is proposed and discussed. The device can not only decrease the specific on-resistance Ron,sp , but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 A·cm-2 with a small half-cell pitch of 10.5 μm, a specific on-resistance R on,sp of 187 mΩ·mm2, and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.
Bibliography:Fu Qiang, Zhang Bo, Luo Xiao-Rong, and Li Zhao-Ji State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
lateral trench insulated gate bipolar transistor;specific on-resistance;positive temperature coefficient;turnoff characteristic
In this paper, a novel dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor （DGDI LTIGBT） structure, which features a double extended trench gate and a dielectric inserted in the drift region, is proposed and discussed. The device can not only decrease the specific on-resistance Ron,sp , but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 A·cm-2 with a small half-cell pitch of 10.5 μm, a specific on-resistance R on,sp of 187 mΩ·mm2, and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/7/077309