Effect of thickness of antimony selenide film on its photoelectric properties and microstructure

• Published in: Chinese physics B Vol. 32; no. 2; pp. 27802 - 562
• Main Authors: Liu, Xin-Li, Weng, Yue-Fei, Mao, Ning, Zhang, Pei-Qing, Lin, Chang-Gui, Shen, Xiang, Dai, Shi-Xun, Song, Bao-An
• Format: Journal Article
• Language: English
• Published: Chinese Physical Society and IOP Publishing Ltd 01.02.2023; Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province,Ningbo 315211,China; Ningbo Institute of Oceanography,Ningbo University,Ningbo 315211,China; Faculty of Electrical Engineering and Computer Science,Ningbo University,Ningbo 315211,China; Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province,Ningbo 315211,China%Faculty of Electrical Engineering and Computer Science,Ningbo University,Ningbo 315211,China; Key Laboratory of Photoelectric Detecting Materials and Devices of Zhejiang Province,Ningbo 315211,China; Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province,Ningbo 315211,China%The Research Institute of Advanced Technologies,Ningbo University,Ningbo 315211,China
• Subjects: antimony selenide films; Levenberg-Marquardt method and spectral fitting method (LM-SFM); microstructure; photoelectric properties; antimony selenide films; microstructure; photoelectric properties; Levenberg-Marquardt method and spectral fit-ting method(LM-SFM)
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/ac8724

Antimony selenide (Sb 2 Se 3 ) films are widely used in phase change memory and solar cells due to their stable switching effect and excellent photovoltaic properties. These properties of the films are affected by the film thickness. A method combining the advantages of Levenberg–Marquardt method and spectral fitting method (LM–SFM) is presented to study the dependence of refractive index (RI), absorption coefficient, optical band gap, Wemple–DiDomenico parameters, dielectric constant and optical electronegativity of the Sb 2 Se 3 films on their thickness. The results show that the RI and absorption coefficient of the Sb 2 Se 3 films increase with the increase of film thickness, while the optical band gap decreases with the increase of film thickness. Finally, the reasons why the optical and electrical properties of the film change with its thickness are explained by x-ray diffractometer (XRD), energy dispersive x-ray spectrometer (EDS), Mott–Davis state density model and Raman microstructure analysis.