An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be ch...

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Bibliographic Details
Published inInternational journal of microwave and wireless technologies Vol. 9; no. 5; pp. 965 - 976
Main Authors Michaelsen, Rasmus S., Johansen, Tom K., Tamborg, Kjeld M., Zhurbenko, Vitaliy, Yan, Lei
Format Journal Article
LanguageEnglish
Published Cambridge, UK Cambridge University Press 01.06.2017
Subjects
Circuit design
Diodes
Mixers
Research Papers
Schottky diodes
Silicon germanides
Superhigh frequencies
Tuning
Circuit design and applications
Si-based devices and IC technologies
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Summary:In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.
ISSN:1759-0787
1759-0795
DOI:10.1017/S1759078716001069