Pyrochlore structure and dielectric properties of bismuth zinc niobate thin films prepared by RF sputtering

Bi1.5Zn1.0Nb1.5O7 (BZN) thin films with thickness from 60nm to 200nm were prepared by radio-frequency magnetron sputtering and post-annealed from 550°C to 650°C. The x-ray diffraction results indicated that the BZN thin films possessed a cubic pyrochlore phase. The BZN thin films exhibited thickness...

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Bibliographic Details
Published inCeramics international Vol. 43; no. 14; pp. 10737 - 10742
Main Authors He, Fan, Ren, Wei, Khan, M. Saeed, Shi, Peng
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.10.2017
Subjects
Capacitors
Dielectric properties
Films
Capacitors
Dielectric properties
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Summary:Bi1.5Zn1.0Nb1.5O7 (BZN) thin films with thickness from 60nm to 200nm were prepared by radio-frequency magnetron sputtering and post-annealed from 550°C to 650°C. The x-ray diffraction results indicated that the BZN thin films possessed a cubic pyrochlore phase. The BZN thin films exhibited thickness-independent dielectric properties with dielectric constant of ~180 and low loss tangent less than 1% at 10kHz as the film thickness decreased to 60nm. The BZN thin films with thickness of 200nm and post-annealed at 650°C had a tunability of 32.7% at a DC bias field of 1.5MV/cm. The results suggest that the BZN thin films have promising applications on the embedded capacitors, tunable devices and energy storage devices.
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2017.05.066