Dielectric response of capacitor structures based on PZT annealed at different temperatures

• Published in: Physics letters. A Vol. 380; no. 47; pp. 4003 - 4007
• Main Authors: Kamenshchikov, Mikhail V., Solnyshkin, Alexander V., Pronin, Igor P.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 09.12.2016
• Subjects: C–V characteristics; Dielectric response; Ferroelectrics; PZT thin films; Dielectric response; PZT thin films; C–V characteristics; Ferroelectrics
• ISSN: 0375-9601; 1873-2429
• DOI: 10.1016/j.physleta.2016.10.004

•Correlation of the microstructure of PZT films and dielectric response was found.•Difference of dielectric responses under low and high bias is caused by domains.•Internal fields is discussed on the basis of the space charges.•Dependences of PZT films characteristics on synthesis temperature are extremal. Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540–570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance–voltage (C–V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.